Semiconductor Physics MCQ

Que.41 For a particular material, the Hall coefficient is found to be zero. The material is

  • (a) intrinsic semiconductor
  • (b) extrinsic semiconductor
  • (c) metal
  • (d) insulator

Answer: (d) insulator

Que.42 At very high temperature, an n-type semiconductor behave like

  • (a) a p-type semiconductor
  • (b) an intrinsic semiconductor
  • (c) a superconductor
  • (d) an n-type semiconductor

Answer: (b) an intrinsic semiconductor

Que.43 The Fermi level in a p-type semiconductor lies close to

  • (a) top of the valence band
  • (b) bottom of the valence band
  • (c) top of the conduction band
  • (d) bottom of the conduction band

Answer: (a) top of the valence band

Que.44 Covalent bond energy in germanium is about

  • (a) 7.4 eV
  • (b) 31 eV
  • (c) 3.4 eV
  • (d) 20.4 eV

Answer: *

Que.45 In a degenerately doped n-type semiconductor, the Fermi level lies in the conduction band when

  • (a) the concentration of electrons in the conduction band exceeds the density of states in the valence band.
  • (b) the concentration of electrons in the valence band exceeds the density of states in the conduction field.
  • (c) the concentration of electrons in the conduction band exceeds the product of the density of states in the valence band and conduction band.
  • (d) None of the above

Answer: (b) the concentration of electrons in the valence band exceeds the density of states in the conduction field.

Que.46 The majority of carriers in an n-type semiconductor have an average drift velocity Vd, in a direction perpendicular to a uniform magnetic field B. The electric field E Induced due to Hall Effect acts in the direction

  • (a) Vd x B
  • (b) B x Vd
  • (c) Along Vd
  • (d) Opposite to V

Answer: (b) B x Vd

Que.47 At a temperature of 298 Kelvin, Silicon is not suitable for most electronic applications, due to the small amount of conductivity. This can be altered by

  • (a) Gettering
  • (b) Doping
  • (c) Squeezing
  • (d) Sintering

Answer: (b) Doping

Que.48 The energy gap in the energy band structure of a material is 9 eV at room temperature. The material is

  • (a) Semiconductor
  • (c) Metal
  • (b) Conductor
  • (d) Insulator

Answer: (d) Insulator

Que.49 According to Einstein’s relationship for a semiconductor, the ratio of the diffusion constant to the mobility of the charge carriers is

  • (a) Variable and is twice the volt equivalent of the temperature
  • (b) Constant and is equal to the volt equivalent of the temperature
  • (c) Equal to the two and is twice the volt equivalent of the temperature
  • (d) Equal to one and is equal to the volt equivalent of the temperature

Answer: (b) Constant and is equal to the volt equivalent of the temperature

Que.50 For which one of the following materials, is the Hall coefficient closest to zero?

  • (a) Metal
  • (b) Insulator
  • (c) Intrinsic semiconductor
  • (d) Alloy

Answer: (b) Insulator

Hello friends, my name is Trupal Bhavsar, I am the Writer and Founder of this blog. I am Electronics Engineer(2014 pass out), Currently working as Junior Telecom Officer(B.S.N.L.) also I do Project Development, PCB designing and Teaching of Electronics Subjects.

1 thought on “Semiconductor Physics MCQ”

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